Articles
Uğur Serincan, Burcu Arpapay, Structural and Optical Characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy, Semiconductor Science and Technology, 2019, DOI: 10.1088/1361-6641/aafcbe
Uğur Serincan, Bulent Arikan, Onur Şenel, Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate, Superlattices and Microstructures 120, 15-21, 2018, DOI: 10.1016/j.spmi.2018.05.020
Melih Korkmaz, Bulent Arikan, Y Eren Suyolcu, Bulent Aslan, Uğur Serincan, Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array, Semicond. Sci. Technol. 33, 035002 (6pp), 2018, DOI: 10.1088/1361-6641/aaa7a0.
Uğur SERİNCAN, Hülya KURU MUTLU, Mustafa KULAKCI, Kuantum Nokta Ara Bant Oluşumlu Güneş Hücresinin Büyütülmesi, Fabrikasyonu ve Karakterizasyonu, Politeknik Dergisi, 20 (3) : 565-569, 2017, DOI: 10.2339/politeknik.339365.
Uğur SERİNCAN, Mehmet ERKUŞ ve Onur ŞENEL, Unpassivated high operating temperature GaInAsSb infrared photodetector grown on GaAs substrate, Anadolu Univ. J. of Sci. and Technology A – Appl. Sci. and Eng. 18 (3), 2017, DOI: 10.18038/aubtda.318136.
M. Erkus, O. Senel, U. Serincan, Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate, Thin Solid Films 616, 141–144, 2016, DOI: 10.1016/j.tsf.2016.08.011.
Bulent Aslan, Melih Korkmaz, Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices, Applied Surface Science 362, 244–249, 2016, DOI: 10.1016/j.apsusc.2015.11.244.
Melih Korkmaz, Melih Kaldirim, Bulent Arikan, Uğur Serincan and Bulent Aslan, Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping, Semicond. Sci. Technol. 30, 085006 (5pp), 2015, DOI: 10.1088/0268-1242/30/8/085006.
Bulent Arikan, Melih Korkmaz, Bulent Aslan, Uğur Serincan, Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces, Thin Solid Films 589, 813–816, 2015, DOI: 10.1016/j.tsf.2015.07.020.
M. Erkuş, U. Serincan, Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs, Applied Surface Science 318, 28–31, 2014, DOI: 10.1016/j.apsusc.2013.12.046.
B. Arpapay, S. Şahin, B. Arıkan, U. Serincan, Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure, Thin Solid Films 564, 110–114, 2014, DOI: 10.1016/j.tsf.2014.05.034.
Bulent Arikan, Guven Korkmaz, Yusuf Eren Suyolcu, Bulent Aslan, Ugur Serincan, On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses, Thin Solid Films 548, 288–291, 2013, DOI: 10.1016/j.tsf.2013.08.089.
Hülya Kuru, Burcu Arpapay, Tuğçe Karakulak, Bülent Arıkan, Bülent Aslan ve Uğur Serincan, Characterization of a Multilayer GaAs/AlGaAs Broadband Quantum Well Infrared Photodetectors, Proceedings of the European conference of chemical engineering, and European conference of civil engineering, and European conference of mechanical engineering, and European conference on Control, 232-235, 2010.
Thesis
Growth and Characterization of III-V Group Nanostructures on Si Substrates by MBE, Burcu ARPAPAY, PhD thesis, Resuming.
Growth and Characterization of III-V Group Intermediate Band Solar Cells, Hülya KURU MUTLU, PhD thesis, Resuming.
High-Operating-Temperature (HOT) Infrared Detectors Based on Antimonide Heterostructures, Melih KORKMAZ, PhD thesis, Resuming.
Formation and characterization of thin insulator
layers for metal-insulator-metal and metal-insulator-semiconductor
structures, Berker HÜSAM, PhD thesis, Resuming.
Observation of passivation
effect on single pixel midwavelength infrared detectors, Onur
ŞENEL, MSc thesis, 2
Growth of InAs/GaSb type-II superlattice infrared photodetector structures on GaSb and GaAs substrates by MBE technique, Bülent ARIKAN, PhD thesis, 2015, PDF.
Growth of InAsSb and GaInAsSb compounds on GaAs substrate by MBE technique for infrared detector applicatons, Mehmet ERKUŞ, MSc thesis, 2015.
Growth and characterization of high quality GaSb epilayers on GaSb substrates, Seval ŞAHİN, MSc thesis, 2014, PDF.
MBE growth and characterization of self-assembled InAs/GaAs quantum dot structures for infrared detection, Samet ÖZDEMİR, MSc thesis, 2014, PDF.
Optoelectronic investigation of resonance tunneling through a single quantum well, Ayşe ŞEVİK, MSc thesis, 2014, PDF.
Device fabrication and characterization of GaAs/AlGaAs based semiconductors, Burcu ARPAPAY, MSc thesis, 2010, PDF.
Optical and electrical characterization of GaAs/AlGaAs quantum wells, Hülya KURU, MSc thesis, 2010, PDF.
Characterization of GaAs/AlGaAs quantum wells with TEM (transmission electron microscopy) techniques, Tuğçe KARAKULAK, MSc thesis, 2010, PDF.