Thesis

• Growth and Characterization of III-V Group Nanostructures on Si Substrates by MBE, Burcu ARPAPAY, PhD thesis, Resuming.

• Growth and Characterization of III-V Group Intermediate Band Solar Cells, Hülya KURU MUTLU, PhD thesis, Resuming.

• High-Operating-Temperature (HOT) Infrared Detectors Based on Antimonide Heterostructures, Melih KORKMAZ, PhD thesis, Resuming.

• Formation and characterization of thin insulator layers for metal-insulator-metal and metal-insulator-semiconductor structures, Berker HÜSAM, PhD thesis, Resuming.

• Observation of passivation effect on single pixel midwavelength infrared detectors, Onur ŞENEL, MSc thesis, Resuming.

• Characterization of InAs/GaSb tip-II superlattice structures by current and capacitance measurements, Erdem YILDIRIM, MSc thesis, Resuming.

• Removal of epitaxial GaAs thin layers and transfering on flexible material for solar cell applications, Hazal ZAİMLER, MSc thesis, Resuming.

• MBE growth and characterization of THz detector structures using quantum confined impurity atoms, Güven KORKMAZ, PhD thesis, 2017.

• Growth of InAs/GaSb type-II superlattice infrared photodetector structures on GaSb and GaAs substrates by MBE technique, Bülent ARIKAN, PhD thesis, 2015, PDF.

• Growth of InAsSb and GaInAsSb compounds on GaAs substrate by MBE technique for infrared detector applicatons, Mehmet ERKUŞ, MSc thesis, 2015.

• Growth and characterization of high quality GaSb epilayers on GaSb substrates, Seval ŞAHİN, MSc thesis, 2014, PDF.

• MBE growth and characterization of self-assembled InAs/GaAs quantum dot structures for infrared detection, Samet ÖZDEMİR, MSc thesis, 2014, PDF.

• Opto-electronic characterization of InAs/GaSb superlattice photodiodes operating in the mid-wavelength infrared, Melih KORKMAZ, MSc thesis, 2014, PDF.

• Characterization of epitaxially grown III-V nanostructures by electron microscopy, Yusuf Eren SUYOLCU, MSc thesis, 2014, PDF.

• Optoelectronic investigation of resonance tunneling through a single quantum well, Ayşe ŞEVİK, MSc thesis, 2014, PDF.

• Device fabrication and characterization of GaAs/AlGaAs based semiconductors, Burcu ARPAPAY, MSc thesis, 2010, PDF.

• Optical and electrical characterization of GaAs/AlGaAs quantum wells,  Hülya KURU, MSc thesis, 2010, PDF.

• Characterization of GaAs/AlGaAs quantum wells with TEM (transmission electron microscopy) techniques, Tuğçe KARAKULAK, MSc thesis, 2010, PDF.

Articles

• Melih Korkmaz, Bulent Arikan, Y Eren Suyolcu, Bulent Aslan, Uğur Serincan, Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array, Semicond. Sci. Technol. 33, 035002 (6pp), 2018, DOI: 10.1088/1361-6641/aaa7a0.

• Uğur SERİNCAN, Hülya KURU MUTLU, Mustafa KULAKCI, Kuantum Nokta Ara Bant Oluşumlu Güneş Hücresinin Büyütülmesi, Fabrikasyonu ve Karakterizasyonu, Politeknik Dergisi, 20 (3) : 565-569, 2017, DOI: 10.2339/politeknik.339365.

• Uğur SERİNCAN, Mehmet ERKUŞ ve Onur ŞENEL, Unpassivated high operating temperature GaInAsSb infrared photodetector grown on GaAs substrate, Anadolu Univ. J. of Sci. and Technology A – Appl. Sci. and Eng. 18 (3), 2017 , DOI: 10.18038/aubtda.318136.

• M. Erkus, O. Senel, U. Serincan, Structural, optical and electrical characterization of InAs_0.83Sb_0.17 p-π-n photodetector grown on GaAs substrate, Thin Solid Films 616, 141–144, 2016, DOI: 10.1016/j.tsf.2016.08.011.

• Bulent Aslan, Melih Korkmaz, Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices, Applied Surface Science 362, 244–249, 2016, DOI: 10.1016/j.apsusc.2015.11.244.

• Melih Korkmaz, Melih Kaldirim, Bulent Arikan, Uğur Serincan and Bulent Aslan, Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping, Semicond. Sci. Technol. 30, 085006 (5pp), 2015, DOI: 10.1088/0268-1242/30/8/085006.

• Bulent Arikan, Melih Korkmaz, Bulent Aslan, Uğur Serincan, Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces, Thin Solid Films 589, 813–816, 2015, DOI: 10.1016/j.tsf.2015.07.020.

• M. Erkuş, U. Serincan, Phonon frequency variations in high quality InAs_1-xSb_x epilayers grown on GaAs, Applied Surface Science 318, 28–31, 2014, DOI: 10.1016/j.apsusc.2013.12.046.

• B. Arpapay, S. Şahin, B. Arıkan, U. Serincan, Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure, Thin Solid Films 564, 110–114, 2014, DOI: 10.1016/j.tsf.2014.05.034.

• Bulent Arikan, Guven Korkmaz, Yusuf Eren Suyolcu, Bulent Aslan, Ugur Serincan, On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses, Thin Solid Films 548, 288–291, 2013, DOI: 10.1016/j.tsf.2013.08.089.

• Hülya Kuru, Burcu Arpapay, Tuğçe Karakulak, Bülent Arıkan, Bülent Aslan ve Uğur Serincan, Characterization of a Multilayer GaAs/AlGaAs Broadband Quantum Well Infrared Photodetectors, Proceedings of the European conference of chemical engineering, and European conference of civil engineering, and European conference of mechanical engineering, and European conference on Control, 232-235, 2010.