Nanoboyut Research Laboratory

Exploring Advances in Type-II Superlattice Detectors and Group III-V Flexible Solar Cells

Type-II, Tip-II, T2SL, süperörgü, dedektör, superlattice, detector, semiconductor, yarıiletken, nanoboyut, solar cell, güneş hücresi, pili, GaAs, InAs, GaSb, InSb, InGaAs, GaInAsSb, AlGaAs, InAsSb, Si, PL, TEM, SEM, AFM, HRXRD

T2SL süperörgü dedektör, superlattice detector, semiconductor, yarıiletken, nanoboyut, solar cell, güneş hücresi, pili, GaAs, InAs, GaSb, InSb, InGaAs, GaInAsSb, AlGaAs, InAsSb, Si, PL, TEM, SEM, AFM, HRXRD

Publications

Articles

  • Ayşe Aygül Ergürhan, Burcu Arpapay, Sabahattin Erinç Erenoğlu, Mustafa Kulakcı, Behçet Özgür Alaydin, Didem Altun, Uğur Serincan, Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy, Journal of Crystal Growth 670 128330, 2025, DOI: 10.1016/j.jcrysgro.2025.128330
  • Elif Yılmaz, Ayşe Aygül Ergürhan, Onur Şenel, Burcu Arpapay, Mustafa Kulakcı, Uğur Serincan, Highly ordered polystyrene nanospheres by self-assembly method, Journal of Micro/Nanopatterning, Materials, and Metrology, 24(1), 013001, 2025, DOI: 10.1117/1.JMM.24.1.013001
  • Burcu Arpapay, Ayşe Aygül Ergürhan, Sabahattin Erinç Erenoğlu, Behçet Özgür Alaydin, Mustafa Kulakcı, Uğur Serincan, Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition, Materials Science in Semiconductor Processing, 185, 109012, 2025, DOI: 10.1016/j.mssp.2024.109012
  • Ayşe Aygül Ergürhan, Onur Şenel, Elif Yılmaz, Burcu Arpapay, Mustafa Kulakcı, Uğur Serincan, Effect of tilt angle and drying temperature on the surface coverage rate of polystyrene nanospheres in evaporation-driven self-assembly process, Journal of Micro/Nanopatterning, Materials, and Metrology, 23(1), 013001, 2024, DOI: 10.1117/1.JMM.23.1.013001
  • Burcu Arpapay, Y. Eren Suyolcu, Gülcan Çorapçıoğlu, Peter A. van Aken, Mehmet Ali Gülgün and Uğur Serincan, A comparative study on GaSb epilayers grown on nominal and vicinal Si (100) substrates by molecular beam epitaxy, Semiconductor Science and Technology, 2020, DOI: 10.1088/1361-6641/abce1b
  • Burcu Arpapay, Uğur Serincan, The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates, Superlattices and Microstructures, 140, 106450, 2020, DOI: 10.1016/j.spmi.2020.106450
  • Burcu Arpapay, Özgür Duygulu, Uğur Serincan, Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy , Materials Science in Semiconductor Processing, 111, 104909, 2020, DOI: 10.1016/j.mssp.2020.104990
  • Burcu Arpapay, Uğur Serincan, Convex-like GaAs nanowires grown on Si (111) substrates, Materials Science in Semiconductor Processing, 107, 104817, 2020, DOI: 10.1016/j.mssp.2019.104817
  • Uğur Serincan, Burcu Arpapay, Structural and Optical Characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy, Semiconductor Science and Technology, 34, 035013, 2019, DOI: 10.1088/1361-6641/aafcbe
  • Uğur Serincan, Bülent Arıkan, Onur Şenel, Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate, Superlattices and Microstructures 120, 15-21, 2018, DOI: 10.1016/j.spmi.2018.05.020
  • Melih Korkmaz, Bülent Arıkan, Y. Eren Suyolcu, Bülent Aslan, Uğur Serincan, Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array, Semicond. Sci. Technol. 33, 035002 (6pp), 2018, DOI: 10.1088/1361-6641/aaa7a0.
  • Uğur Serincan, Hülya Kuru Mutlu, Mustafa Kulakcı, Kuantum Nokta Ara Bant Oluşumlu Güneş Hücresinin Büyütülmesi, Fabrikasyonu ve Karakterizasyonu, Politeknik Dergisi, 20 (3) : 565-569, 2017, DOI: 10.2339/politeknik.339365.
  • Uğur Serincan, Mehmet Erkuş ve Onur Şenel, Unpassivated high operating temperature GaInAsSb infrared photodetector grown on GaAs substrate, Anadolu Univ. J. of Sci. and Technology A – Appl. Sci. and Eng. 18 (3), 2017, DOI: 10.18038/aubtda.318136.
  • Mehmet Erkus, Onur Senel, Uğur Serincan, Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate, Thin Solid Films 616, 141–144, 2016, DOI: 10.1016/j.tsf.2016.08.011.
  • Bülent Aslan, Melih Korkmaz, Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices, Applied Surface Science 362, 244–249, 2016, DOI: 10.1016/j.apsusc.2015.11.244.
  • Melih Korkmaz, Melih Kaldirim, Bülent Arıkan, Uğur Serincan and Bulent Aslan, Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p–i–n versus residual doping, Semicond. Sci. Technol. 30, 085006 (5pp), 2015, DOI: 10.1088/0268-1242/30/8/085006.
  • Bülent Arıkan, Melih Korkmaz, Bülent Aslan, Uğur Serincan, Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces, Thin Solid Films 589, 813–816, 2015, DOI: 10.1016/j.tsf.2015.07.020.
  • Mehmet Erkuş, Uğur Serincan, Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs, Applied Surface Science 318, 28–31, 2014, DOI: 10.1016/j.apsusc.2013.12.046.
  • Burcu Arpapay, Seval Şahin, Bülent Arıkan, Uğur Serincan, Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure, Thin Solid Films 564, 110–114, 2014, DOI: 10.1016/j.tsf.2014.05.034.
  • Bülent Arıkan, Güven Korkmaz, Yusuf Eren Suyolcu, Bülent Aslan, Ugur Serincan, On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses, Thin Solid Films 548, 288–291, 2013, DOI: 10.1016/j.tsf.2013.08.089.
  • Hülya Kuru, Burcu Arpapay, Tuğçe Karakulak, Bülent Arıkan, Bülent Aslan ve Uğur Serincan, Characterization of a Multilayer GaAs/AlGaAs Broadband Quantum Well Infrared Photodetectors, Proceedings of the European conference of chemical engineering, and European conference of civil engineering, and European conference of mechanical engineering, and European conference on Control, 232-235, 2010.

Patent

Theses

  • Development of group III-V flexible solar cells on patterned Si substrates, Onur ŞENEL, PhD thesis, 2025, PDF.
  • Bandgap simulation for type-II superlattice semiconductor photodetectors, Bora ÇAKIROĞLU, PhD thesis, 2024, PDF.
  • Integration of metal oxide inorganic materials into GaAs cell technology as electron selective emitter layer, Elif YILMAZ, PhD thesis, 2024, PDF.
  • Design and modeling of III-V group semiconductor material based thin film βeta (β) voltaic cells, Samet ÖZDEMİR, PhD thesis, 2024.
  • Investigation of grown Sb-based III-V group semiconductor structures for solar cell and laser applications, Sabahattin Erinç ERENOĞLU, MSc thesis, 2024, PDF.
  • Development of low resistance Ohmic contact structures for GaAs based semiconductor devices, Koray KESER, MSc thesis, 2023, PDF.
  • High-operating-temperature (HOT) infrared detectors based on antimonide heterostructures, Melih KORKMAZ, PhD thesis, 2022, PDF. 
  • Fabrication, characterization and application of thin insulator films for metal-insulator-metal and metal-insulator-semiconductor devices, Berker HÜSAM, PhD thesis, 2022, PDF.
  • Development of thin film GaAs p-i-n solar cells peeled-off from Si substrates, Furkan AZİM, MSc thesis, 2022, PDF.
  • Fabrication and characterization of thin-film GaAs solar cells peeled-off from Si substrates, Ali BÜYÜKPINAR, MSc thesis, 2021, PDF.
  • Growth of GaAs epilayers on Si substrate for high efficiency thin film solar cell application, Muhammed AKTAŞ, MSc thesis, 2020, PDF.
  • Time of flight based LiDAR, Azad Ozan KORKAN, MSc thesis, 2020, PDF.
  • Epitaxial lift-off of GaAs thin films and transferring on to the flexible carriers for solar cell applications, Hazal ZAİMLER, MSc thesis, 2019, PDF.
  • Growth and characterization of group III-V nanostructures on Si substrates by MBE, Burcu ARPAPAY, PhD thesis, 2019, PDF.
  • Observation of passivation effect on single pixel midwavelength infrared detectors, Onur ŞENEL, MSc thesis, 2018, PDF.
  • Characterization of InAs/GaSb tip-II superlattice structures by current and capacitance measurements, Erdem YILDIRIM, MSc thesis, 2018, PDF.
  • MBE growth and characterization of THz detector structures using quantum confined impurity atoms, Güven KORKMAZ, PhD thesis, 2017, PDF.
  • Growth of InAs/GaSb type-II superlattice infrared photodetector structures on GaSb and GaAs substrates by MBE technique, Bülent ARIKAN, PhD thesis, 2015, PDF.
  • Growth of InAsSb and GaInAsSb compounds on GaAs substrate by MBE technique for infrared detector applicatons, Mehmet ERKUŞ, MSc thesis, 2015, PDF.
  • Growth and characterization of high quality GaSb epilayers on GaSb substrates, Seval ŞAHİN, MSc thesis, 2014, PDF.
  • MBE growth and characterization of self-assembled InAs/GaAs quantum dot structures for infrared detection, Samet ÖZDEMİR, MSc thesis, 2014, PDF.
  • Opto-electronic characterization of InAs/GaSb superlattice photodiodes operating in the mid-wavelength infrared, Melih KORKMAZ, MSc thesis, 2014, PDF.
  • Characterization of epitaxially grown III-V nanostructures by electron microscopy, Y. Eren SUYOLCU, MSc thesis, 2014, PDF.
  • Optoelectronic investigation of resonance tunneling through a single quantum well, Ayşe ŞEVİK, MSc thesis, 2014, PDF.
  • Device fabrication and characterization of GaAs/AlGaAs based semiconductors, Burcu ARPAPAY, MSc thesis, 2010, PDF.
  • Optical and electrical characterization of GaAs/AlGaAs quantum wells, Hülya KURU, MSc thesis, 2010, PDF.
  • Characterization of GaAs/AlGaAs quantum wells with TEM (transmission electron microscopy) techniques, Tuğçe KARAKULAK, MSc thesis, 2010, PDF.

Awards

“Do not say a little in many words but a great deal in few.”

— Pythagoras

T2SL, T2SLs, süperörgü, superlattice, type II, tip II, InAs, GaSb, InGaAs, InGaAsSb, GaAs, AlAs, AlGaAs, AlGaAsSb, solar cell, flexible, güneş hücresi, güneş pili